1. Kumar M.J. and
C.Linga Reddy, "Silicon-on-Insulator Lateral Dual Sidewall Schottky (SOI-LDSS) Concept for Improved Rectifier Performance:
A Two-Dimensional Simulation Study," Microelectronics International,
vol. 23, No.1, pp. 16-18, January 2006.
2. Kumar M.J. and C.Linga Reddy,
“A New Dual bandgap Emitter Schottky Collector PNM HBT on SOI with Reduced Collector Emitter Offset Voltage,”
IEE Proceedings on Circuits, Devices and Systems,
Vol.151, April 2004.
3. Kumar M.J. and C.Linga Reddy,
“A New High Voltage 4H-SiC Lateral Dual Sidewall Schottky (LDSS) Rectifier: Theoretical Investigation and Analysis,”
IEEE Transactions on Electron Devices,
Vol.50, pp.1690-1693, July 2003.
4. Kumar M.J. and C.Linga Reddy,
“A Novel SiC Emitter, SiGe Base Lateral Schottky Collector NPM HBT on SOI,” Microelectronics Reliability Journal, Vol.43, pp.1145-1149, July 2003.
5. Kumar M.J. and C.Linga Reddy,
“A New dual-bandgap SiC-on-Si P-emitter, SiGe N-base, lateral Schottky Metal-collector (PNM) HBT on SOI with reduced
collector-emitter offset-voltage,” IEEE
TENCON 2003.
6. Kumar M.J. and C.Linga Reddy, “Application of Lateral Dual Sidewall Schottky (LDSS)
Concept for Improved Rectifier Performance on SOI - Design and Optimization,” IEEE TENCON - 2003.
7. Kumar M.J. and C.Linga
Reddy, “A Novel 4H-SiC Lateral Dual Sidewall Schottky Rectifier with excellent forward and reverse characteristics,”
IASTED
International Conference on Circuits, Signals, and Systems (CSS' 03) Cancun, Mexico, May 19-21, 2003.
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